中国电源学会第二十三届学术年会
中国电源学会第二十三届学术年会
大会报告
 
Dr. Juan Rivas
Stanford University
报告题目:Design considerations of radio frequency power converters

 

报告摘要:By Increasing the switching frequency of power converters, we can improve power density, reduce transient response times, and enhance the system's level of integration. At frequencies above few MHz, however, maintaining high efficiency over a wide load present significant challenges. Replacing legacy Si devices with wide-bandgap (WBG) power semiconductors, such as GaN and SiC makes MHz switching easier to accomplish, but this replacement alone is far from sufficient. In this talk, we discuss some of the circuit techniques that can lead to efficient, compact, and high-frequency power converters using both WBG devices and low-cost Si devices.

 

报告人简介:Juan Rivas is an Assistant Professor at Stanford’s Electrical Engineering department. Before, he served as an Assistant Professor at the University of Michigan and worked for GE Global Research in the high-frequency power electronics group. He has extensive experience in the design of dc-dc power converters working at MHz frequencies. He has published peer-reviewed work on power converters reaching up to 100 MHz using Si and WBG devices. He obtained his doctoral degree from MIT in 2006. His research interests include power electronics, resonant converters, resonant gate drive techniques, high-frequency magnetics, and finding new applications for power converters.

 

重要日期
  • 论文初稿提交截止时间

    ( 2019年6月30日 2019年7月15日 )

  • 论文录用通知时间

    ( 2019年8月15日 )

  • 专题讲座、工业报告征集截止时间

    ( 2019年6月30日 2019年7月10日 )

  • 终稿提交时间

    ( 2019年9月15日 )

  • 大会时间

    ( 2019年11月1日-4日 )