报告题目：Impact of SiC and RC-IGBT on Elecric Railway and EV Drives
报告摘要：Growing population and economy of this planet require us to build up a sustainable society. In electric power conversion and motor drive, more energy- and resource-saving, efficient systems must be developed. Power devices are the key for efficient power electronic systems. In this speech, state-of-the-art power devices and their applications are presented mainly on SiC and RC-IGBT. They increase the output power density, reduce the consumption of natural resources, and increase the efficiency of electric systems. Especially, the impacts of SiC and RC-IGBT on electric railway and EV drives are great.
报告人简介：Dr. Tatsuhiko Fujihira is the CTO for Electronic Devices, Fuji Electric Co., Ltd., Japan. He has more than 30 years of experience in the research and development of power semiconductor devices, including IGBT, power MOSFET, and SiC. He has authored more than 30 papers, including the world-first technical paper of superjunction devices, in which he named the device as “Superjunction”, holds more than 100 patents, and is the receiver of three scientific awards.
( 2019年8月15日 )
( 2019年9月15日 )
( 2019年11月1日-4日 )
( 2019年9月30日 )